| Parameter |
Description |
| area |
Area factor |
| ic-vds |
Initial D-S voltage |
| ic-vgs |
Initial G-S voltage |
| temp |
Instance temperature |
| vgs |
Voltage G-S |
| vgd |
Voltage G-D |
| ig |
Current at gate node |
| id |
Current at drain node |
| is |
Source current |
| igd |
Current G-D |
| gm |
Transconductance |
| gds |
Conductance D-S |
| ggs |
Conductance G-S |
| ggd |
Conductance G-D |
| qgs |
Charge storage G-S junction |
| qgd |
Charge storage G-D junction |
| cqgs |
Capacitance due to charge storage G-S junction |
| cqgd |
Capacitance due to charge storage G-D junction |
| p |
Power dissipated by the JFET |